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HAT2279H

Renesas Technology
Part Number HAT2279H
Manufacturer Renesas Technology
Description Silicon N-Channel Power MOSFET
Published Apr 13, 2010
Detailed Description HAT2279H Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 4.5 V gate drive ...
Datasheet PDF File HAT2279H PDF File

HAT2279H
HAT2279H

Overview
HAT2279H Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 4.
5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 9.
5 mΩ typ.
(at VGS = 10 V) • Lead Free Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 D 5 1 234 4 G SSS 123 REJ03G1464-0200 Rev.
2.
00 Jul 05, 2006 1, 2, 3 Source 4 Gate 5 Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1.
PW ≤ 10...


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