N-Channel MOSFET
HFD2N65U_HFU2N65U HFD2N65U / HFU2N65U 650V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 5 ȍ7\S#9GS=10V 100% Avalan...
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