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HFD2N65S

SemiHow
Part Number HFD2N65S
Manufacturer SemiHow
Description N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFD2N65S_HFU2N65S Mar 2010 HFD2N65S / HFU2N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 5.0 ȍ ID = 1.6 A FE...
Datasheet PDF File HFD2N65S PDF File

HFD2N65S
HFD2N65S

Overview
HFD2N65S_HFU2N65S Mar 2010 HFD2N65S / HFU2N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 5.
0 ȍ ID = 1.
6 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 6.
0 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 5.
0 ȍ (Typ.
) @VGS=10V ‰ 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD2N65S 1 2 3 HFU2N65S 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ഒ) – Continuous (TC = 100ഒ͚ – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 650 1.
6 1.
0 6.
4 ρ30 100 1.
6 4.
4 4.
5 PD TJ, TSTG TL Power Dissipation (...


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