N-Channel MOSFET
HFP10N60U HFP10N60U 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.67 ȍ7\S#9GS=10V 100% Avalanche Tested Feb ...
SemiHow