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HFP10N60

SemiHow
Part Number HFP10N60
Manufacturer SemiHow
Description N-Channel MOSFET
Published Jun 7, 2015
Detailed Description HFP10N60 HFP10N60 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robu...
Datasheet PDF File HFP10N60 PDF File

HFP10N60
HFP10N60

Overview
HFP10N60 HFP10N60 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 15 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.
64 Ω (Typ.
) @VGS=10V Nov 2005 BVDSS = 600 V RDS(on) typ = 0.
64 Ω ID = 9.
5 A TO-220 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 600 9.
5 6.
03 38 ±30 520 9.
5 15.
6 5.
5 PD TJ, TSTG TL Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum ...


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