HZU6.
8L
Silicon Epitaxial Planar Zener Diode for Surge Absorb
ADE-208-678(Z) Rev 0 Jul.
1998 Features
• Lower reverse current leakage compared with conventional products.
• Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information
Type No.
HZU6.
8L Laser Mark 68C Package Code URP
Outline
Cathode mark Mark 1
68C
2 1.
Cathode 2.
Anode
HZU6.
8L
Absolute Maximum Ratings (Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note 1.
See Fig.
2.
Symbol Pd Tj Tstg
*1
Value 200 150 -55 to +150
Unit mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Zener
voltage Reverse current Dynamic resistance Symbol VZ IR rd Min 6.
47 — — Typ — — — Ma...