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HZU6.8Z

Hitachi
Part Number HZU6.8Z
Manufacturer Hitachi
Description Silicon Epitaxial Planar Zener Diode for Surge Absorb
Published Apr 23, 2005
Detailed Description HZU6.8Z Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-777(Z) Rev 0 Feb. 1999 Features • Low capacitance...
Datasheet PDF File HZU6.8Z PDF File

HZU6.8Z
HZU6.8Z

Overview
HZU6.
8Z Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-777(Z) Rev 0 Feb.
1999 Features • Low capacitance (C=25pF max) and can protect ESD of signal line.
• Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information Type No.
HZU6.
8Z Laser Mark 68Z Package Code URP Outline Cathode mark Mark 1 68Z 2 1.
Cathode 2.
Anode HZU6.
8Z Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note 1.
See Fig.
2.
Symbol Pd Tj Tstg *1 Value 200 150 -55 to +150 Unit mW °C °C Electrical Characteristics (Ta = 25°C) Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *2 Symbol VZ IR C rd  Min 6.
47    20 Typ      Max 7.
00 2 25 30  Unit V µA pF Ω kV Test Condition I Z = 5 mA, 40ms pulse VR =3.
5V VR = 0V, f = 1 MHz I Z = 5 mA C =150pF, R = 330 Ω, Both forward and reverse direction 10 pulse Notes 1.
Failure criterion ; IR > 2 µA at VR = 3.
5V.
2 HZU6.
8Z Main Chara...


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