IGC114T170S8RH IGBT3 Power Chip Features: • 1700V Trench + Field stop technology • low switching losses and saturation losses • soft turn off • positive temperature coefficient • easy paralleling This chip is used for: • power modules Applications: • drives Chip Type VCE IC Die Size IGC114T170S8RH 1700V 100A 9.
47 x 12.
08 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl.
gate pad) Gate pad size Area total Thickness Wafer size Max.
possible chips per wafer Passivation frontside Pad metal Backside metal 9.
47 x 12.
08 7.
254 x 9.
858 1.
674 x 0.
899 mm2 114.
4 190 µm 200 mm 219 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and so...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)