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IGC114T170S8RM

Infineon
Part Number IGC114T170S8RM
Manufacturer Infineon
Description IGBT
Published Feb 7, 2016
Detailed Description IGC114T170S8RM IGBT3 Power Chip Features:  1700V Trench + Field stop technology  low switching losses  soft turn off...
Datasheet PDF File IGC114T170S8RM PDF File

IGC114T170S8RM
IGC114T170S8RM

Overview
IGC114T170S8RM IGBT3 Power Chip Features:  1700V Trench + Field stop technology  low switching losses  soft turn off  positive temperature coefficient  easy paralleling This chip is used for:  power modules Applications:  drives Chip Type VCE IC Die Size IGC114T170S8RM 1700V 100A 9.
47 x 12.
08 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl.
gate pad) Gate pad size Area total Thickness Wafer size Max.
possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 9.
47 x 12.
08 7.
254 x 9.
858 1.
674 x 0.
899 mm2 114.
4 190 µm 200 mm 225 Photoimide 3200 nm A...


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