Part Number
|
IPUH6N03LB |
Manufacturer
|
Infineon Technologies |
Description
|
OptiMOS2 Power-Transistor |
Published
|
Nov 1, 2010 |
Detailed Description
|
Type
IPUH6N03LB
IPSH6N03LB
OptiMOS®2 Power-Transistor
Package Marking • Qualified according to JEDEC1) for target app...
|
Datasheet
|
IPUH6N03LB
|
Overview
Type
IPUH6N03LB
IPSH6N03LB
OptiMOS®2 Power-Transistor
Package Marking • Qualified according to JEDEC1) for target applications • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant
Product Summary V DS R DS(on),max ID 30 6.
3 50 V mΩ A
Type
IPUH6N03LB
IPSH6N03LB
Package Marking
PG-TO251-3 H6N03LB
PG-TO251-3-11 H6N03LB
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit
Continuous drain current
ID
T C=25 °C2) T C=100 °C
50 50 200 160 6 ±20
A
Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt...
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