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IPUH6N03LAG

Infineon Technologies
Part Number IPUH6N03LAG
Manufacturer Infineon Technologies
Description Power-Transistor
Published Feb 2, 2012
Detailed Description www.DataSheet.co.kr IPDH6N03LA G IPSH6N03LA G IPFH6N03LA G IPUH6N03LA G OptiMOS®2 Power-Transistor Features • Ideal f...
Datasheet PDF File IPUH6N03LAG PDF File

IPUH6N03LAG
IPUH6N03LAG

Overview
www.
DataSheet.
co.
kr IPDH6N03LA G IPSH6N03LA G IPFH6N03LA G IPUH6N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max (SMD version) ID 25 6 50 V mΩ A Type IPDH6N03LA G IPFH6N03LA G IPSH6N03LA G IPUH6N03LA G Package Marking PG-TO252-3-11 H6N03LA PG-TO252-3-23 H6N03LA PG-TO251-3-11 H6N03LA PG-TO251-3-1 H6N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C3) I D=50 A, R GS=25 Ω I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Value 50 50 350 150 6 ±20 71 -55 .
.
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175 55/175/56 mJ kV/µs V W °C Unit A Rev.
1.
3 page 1 2006-05-11 Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr IPDH6N03LA G IPSH6N03LA G Parameter Symbol Conditions min.
Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=30 µA V DS=25 V, V GS=0 V, T j=25 °C V DS=25 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.
5 V, I D=30 A V GS=4.
5 V, I D=30 A, IPD version V GS=10 V, I D=50 A V GS=10 V, I D=50 A, IPD version Gate resistance Transconductance RG g...


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