isc N-Channel
MOSFET Transistor
IRF60R217, IIRF60R217
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤9.
9mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Synchronous rectifier applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
60
VGS
Gate-Source
Voltage
±20
ID
Drain Current-Continuous
58
IDM
Drain Current-Single Pulsed
217
PD
Total Dissipation @TC=25℃
83
Tj
Max.
Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case ther...