PD -91859
IRF7342
HEXFET® Power
MOSFET
Generation V Technology Ultra Low On-Resistance l Dual P-Channel
Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description
l l
S1 G1 S2 G2
1 8
D1 D1 D2 D2
2
7
VDSS = -55V RDS(on) = 0.
105Ω
3
6
4
5
T op V iew
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8...