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IRF7342TRPBF-1

International Rectifier
Part Number IRF7342TRPBF-1
Manufacturer International Rectifier
Description Power MOSFET
Published Mar 22, 2016
Detailed Description VDS RDS(on) max (@VGS = -10V) Qg (typical) ID (@TA = 25°C) -55 0.105 26 -3.4 V Ω nC A IRF7342TRPbF-1 HEXFET® Power M...
Datasheet PDF File IRF7342TRPBF-1 PDF File

IRF7342TRPBF-1
IRF7342TRPBF-1

Overview
VDS RDS(on) max (@VGS = -10V) Qg (typical) ID (@TA = 25°C) -55 0.
105 26 -3.
4 V Ω nC A IRF7342TRPbF-1 HEXFET® Power MOSFET S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number IRF7342PbF-1 Package Type SO-8 Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRF7342TRPbF-1 Absolute Maximum Ratings VDS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C VGS VGSM EAS dv/dt TJ, TSTG Parameter Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10μs Single Pulse Avalanche Energy‚ Peak Diode Recovery dv/dt ƒ Junction and Storage Temperature Range Max.
-55 -3.
4 -2.
7 -27 2.
0 1.
3 0.
016 ± 20 30 114 5.
0 -55 to + 150 Units V A W W/°C V V V/ns °C Thermal Resistance RθJA Parameter Maximum Junction-to-Ambient… Typ.
––– Max.
62.
5 Units °C/W 1 www.
irf.
com © 2014 International Rectifier Submit Datasheet Feedback October 16, 2014 IRF7342TRPbF-1 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250μA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp.
Coefficient ––– -0.
054 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– 0.
095 0.
105 ––– 0.
150 0.
170 Ω VGS = -10V, ID = -3.
4A „ VGS = -4.
5V, ID = -2.
7A „ VGS(th) Gate Threshold Voltage -1.
0 ––– ––– V VDS = VGS, ID = -250μA gfs Forward Transconductance 3.
3 ––– ––– S VDS = -10V, ID = -3.
1A IDSS Drain-to-SourceLeakageCurrent ––– ––– -2.
0 ––– ––– -25 ...


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