PD - 95868
IRF8910
HEXFET® Power
MOSFET
Applications l Dual SO-8
MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box Benefits l Very Low RDS(on) at 4.
5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche
Voltage and Current l 20V VGS Max.
Gate Rating
VDSS
20V
13.
4m:@VGS = 10V
1 2 3 4
RDS(on) max
ID
10A
S1 G1 S2 G2
8 7 6 5
D1 D1 D2 D2
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source
Voltage Gate-to-Source
Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipati...