PD - 95858
IRF8915
HEXFET® Power
MOSFET
Applications Dual SO-8
MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box
VDSS
20V
18.
3m:@VGS = 10V
RDS(on) max
ID
8.
9A
S1 G1
1
8 7
D1 D1 D2 D2
2
Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche
Voltage and Current
S2 G2
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source
Voltage Gate-to-Source
Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
20 ± 20 8.
9 7.
1 71 2.
0 1.
3 0.
016 -55 to + 150
Units
V
c
...