200V/1.
75A P-Channel Power
MOSFET (Discontinued)
IRF9610 SAMSUNG
General Description
Low on resistance Improved inductive ruggedness Fast switching time Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
Features
VDSS= -200V, ID= -1.
75A RDS(ON) ≤ 3.
0 Ω @ VGS= -10V
TO-220
Pin Configuration
1: GATE 2: DRAIN 3: SOURCE
TO-220
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Rev.
A/NX Page 1 of 1
IRF9610
SAMSUNG
Absolute Maximum Ratings
Symbol
Description
IRF9610
VDSS VDGR VG...