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IRF9610

Vishay
Part Number IRF9610
Manufacturer Vishay
Description Power MOSFET
Published Nov 17, 2015
Detailed Description www.vishay.com IRF9610 Vishay Siliconix Power MOSFET TO-220AB S G S D G D P-Channel MOSFET PRODUCT SUMMARY VDS (...
Datasheet PDF File IRF9610 PDF File

IRF9610
IRF9610

Overview
www.
vishay.
com IRF9610 Vishay Siliconix Power MOSFET TO-220AB S G S D G D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max.
(nC) Qgs (nC) Qgd (nC) Configuration -200 VGS = -10 V 3.
0 11 7.
0 4.
0 Single FEATURES • Dynamic dV/dt rating • P-channel Available • Fast switching Available • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant.
For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details DESCRIPTION The power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors.
The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free TO-220AB IRF9610PbF IRF9610PbF-BE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a PD ILM dV/dt Maximum power dissipation Peak diode recovery dV/dt c TC = 25 °C TJ, Tstg Operating junction and storage temperature range Soldering recommendations (peak temperature) d For 10 s Notes a.
Repetitive rating; pulse width limited by maximum junction tempera...


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