IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 18 3.
0 8.
9 Single
D
600 4.
4
• Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC20S, SiHFBC20S) • Low-Profile Through-Hole (IRFBC20L, SiHFBC20L) • Available in Tape and Reel (IRFBC20, SiiHFBC20S) • Dynamic dV/dt Rating • 150 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Compliant to RoHS Directive 2002/95/EC Third generation Power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
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