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IRFBC20S

International Rectifier
Part Number IRFBC20S
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 9.1014 PRELIMINARY l l l l l l l IRFBC20S/L HEXFET® Power MOSFET D Surface Mount (IRFBC20S) Low-profile through-...
Datasheet PDF File IRFBC20S PDF File

IRFBC20S
IRFBC20S

Overview
PD - 9.
1014 PRELIMINARY l l l l l l l IRFBC20S/L HEXFET® Power MOSFET D Surface Mount (IRFBC20S) Low-profile through-hole (IRFBC20L) Available in Tape & Reel (IRFBC20S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 600V RDS(on) = 4.
4Ω G ID = 2.
2A S Description Third generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2Pak is a surface mount power package capable ofthe accommodatingdie sizes up to HEX-4.
It provides the highest power capability and the lowest possible onresistance in any existing surface mount package.
The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.
0W in a typical surface mount application.
The through-hole version (IRFBC20L) is available for low-profile applications.
D 2 Pak T O -2 6 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V… Continuous Drain Current, VGS @ 10V… Pulsed Drain Current … Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ‚… Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ… Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
2.
2 1.
4 8.
0 3.
1 50 0.
40 ± 20 84 2.
2 5.
0 3.
0 -55 to + 150 300 (1.
6mm from case ) Units A W W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ.
––– ––– Max.
2.
5 40 Units °C/W 7/22/97 IRFBC20S/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆ V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS I GSS Qg Q gs Q gd td(on) tr t d(off) tf LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage...


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