IRFD210

IRFD210 Data Sheet July 1999 File Number 2316.3 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as sw...