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IRFD210

Part Number	IRFD210
Manufacturer	GE
Description	FIELD EFFECT POWER TRANSISTOR
Published	Feb 10, 2019
Detailed Description	~~D~[P~U FIELD EFFECT POWER TRANSISTOR IRFD21 0,211 D82BN2,M2 0.6 AMPERES 200, 150 VOLTS RDS(ON) = 1.5 il This series ...
Datasheet	IRFD210 PDF File

Overview

~~D~[P~U FIELD EFFECT POWER TRANSISTOR IRFD21 0,211 D82BN2,M2 0.
6 AMPERES 200, 150 VOLTS RDS(ON) = 1.
5 il This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
Features • Polysilicon gate - Improved stability and reliability • No secondary breakdown - Excellent ruggedness • Ultra-fast switching - Independent of temperature • Voltage controlled - High transconductance • Low input capacitance - Reduced drive requirement • Excellent thermal stability - Ease of paralleling N-CHANNEL CASE STYLE 4-PIN DIP ...

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