PD - 9.
1353A
PRELIMINARY
IRFI530N
D
HEXFET® Power
MOSFET
l l l l l
Advanced Process Technology Isolated Package High
Voltage Isolation = 2.
5KVRMS
Sink to Lead Creepage Dist.
= 4.
8mm Fully Avalanche Rated
VDSS = 100V
G S
RDS(on) = 0.
11Ω ID = 12A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for addition...