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IRFI530G

INCHANGE
Part Number IRFI530G
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 15, 2020
Detailed Description iscN-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.16Ω (MAX) ·Enhancement mode: Vth =...
Datasheet PDF File IRFI530G PDF File

IRFI530G
IRFI530G

Overview
iscN-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.
16Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.
25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 9.
7 A IDM Drain Current-Single Pulsed 39 A PD Total Dissipation @TC=25℃ 42 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch...


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