INCHANGE Semiconductor
isc N-Channel
MOSFET Transistor
isc Product Specification
IRFS620A
FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source
Voltage Gate-Source
Voltage-Continuous
200 ±30
V V
ID Drain Current-Continuous
4.
1 A
IDM Drain Current-Single Pluse
16.
4 A
PD Total Dissipation @TC=25℃
32 W
TJ
Max.
Operating Junction Temperature
-55~150 ℃
Tstg Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
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