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IRFS620A

Fairchild Semiconductor
Part Number IRFS620A
Manufacturer Fairchild Semiconductor
Description Power MOSFET
Published Aug 3, 2016
Detailed Description Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
Datasheet PDF File IRFS620A PDF File

IRFS620A
IRFS620A

Overview
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.
) @ VDS = 200V Low RDS(ON) : 0.
626 Ω (Typ.
) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 oC) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy O2 Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 oC ) Linear Derating Factor O1 O1 O3 Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8 “ from case for 5-seconds IRFS620A BVDSS = 200 V RDS(on) = 0.
8 Ω ID = 4.
1 A TO-220F 1 2 3 1.
Gate 2.
Drain 3.
Source Value 200 4.
1 2.
6 18 +_ 30 78 4.
1 3.
2 5.
0 32 0.
25 - 55 to +150 300 Units V A A V mJ A mJ V/ns W W/oC oC Thermal Resistance Symbol RθJC RθJA Characteristic Junction-to-Case Junction-to-Ambient ©1999 Fairchild Semiconductor Corporation Typ.
--- Max.
3.
95 62.
5 Units oC/W Rev.
B IRFS620A N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25oC unless otherwise specified) Symbol BVDSS ∆BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Min.
Typ.
Max.
Units Test Condition Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coeff.
Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current 200 -- --- 0.
24 -2.
0 -- 4.
0 -- -- 100 -- -- -100 -- -- 10 -- -- 100 V VGS=0V,ID=250µA V/oC ID=250 µA See Fig 7 V VDS=5V,ID=250 µA nA VGS=30V VGS=-30V VDS=200V µA VDS=160V,TC=125 oC Static Drain-Source On-State Resistance -- -- 0.
8 Ω VGS=10V,ID=2.
05A O4 Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance -- 2.
34 -- Ω VDS=40V,ID=2.
05A O4 -- 275 360...


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