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PD - 9.
1497A
PRELIMINARY Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High
Voltage Isolation = 2.
5KVRMS
l Sink to Lead Creepage Dist.
= 4.
8mm l Fully Avalanche Rated Description
l l
IRLI540N
HEXFET® Power
MOSFET
D
VDSS = 100V RDS(on) = 0.
044Ω
G
ID = 23A
S
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of application...