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IRLI540NPbF

Infineon
Part Number IRLI540NPbF
Manufacturer Infineon
Description Power MOSFET
Published Oct 30, 2020
Detailed Description  Logic –Level Gate Drive  Advanced Process Technology  Isolated Package  High Voltage Isolation = 2.5KVRMS   Sink ...
Datasheet PDF File IRLI540NPbF PDF File

IRLI540NPbF
IRLI540NPbF

Overview
 Logic –Level Gate Drive  Advanced Process Technology  Isolated Package  High Voltage Isolation = 2.
5KVRMS   Sink to Lead Creepage Dist.
= 4.
8mm  Fully Avalanche Rated  Lead-Free IRLI540NPbF HEXFET® Power MOSFET VDSS RDS(on) ID 100V 0.
044 23A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Full Pak eliminates the need ...


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