isc N-Channel
MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 5.
5mΩ@VGS=10V ·Fully characterized avalanche
voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·DC/DC Converters ·High Current Switching Applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBO L
PARAMETER
VALUE
VDSS Drain-Source
Voltage
85
UNIT V
VGS
Gate-Source
Voltage
±20
V
ID
Drain Current-Continuous
180
A
IDM
Drain Current-Single Pulsed
480
A
PD
Total Dissipation @TC=25℃
430
W
Tj
Operating Junction Temperature
-55~175
℃
Tstg
Storage Temperature
-55~175
℃
·THERMAL CHARACTERISTICS
SY...