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IXTQ180N085T

IXYS Corporation
Part Number IXTQ180N085T
Manufacturer IXYS Corporation
Description Power MOSFET
Published Feb 13, 2015
Detailed Description TrenchMVTM Power MOSFET IXTH180N085T IXTQ180N085T N-Channel Enhancement Mode Avalanche rated Fast Intrinsic Rectifier ...
Datasheet PDF File IXTQ180N085T PDF File

IXTQ180N085T
IXTQ180N085T

Overview
TrenchMVTM Power MOSFET IXTH180N085T IXTQ180N085T N-Channel Enhancement Mode Avalanche rated Fast Intrinsic Rectifier VDSS = 85V ID25 = 180A ≤RDS(on) 5.
5mΩ TO-247 Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.
6mm (0.
063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247&TO-3P) TO-247 TO-3P Maximum Ratings 85 85 V V ±20 V 180 A 75 A 480 A 25 A 1.
0 J 430 W -55 to +175 +175 -55 to +175 °C °C °C 300 °C 260 °C 1.
13/10 Nm/lb.
in.
6.
0 g 5.
5 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ RDS(on) VGS = 10V, ID = 25A, Note 1 = 150°C Characteristic Values Min.
Typ.
Max.
85 V 2.
0 4.
0 V ±200 nA 5 μA 250 μA 4.
5 5.
...


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