Ordering number:ENN4753
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-
voltage drive.
N-Channel Silicon
MOSFET
2SK2260
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm 2062A
[2SK2260] 4.
5 1.
6 1.
5
1.
0 2.
5 4.
25max
0.
4 0.
5
32 1.
5 3.
0
1
0.
75
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature
Tch Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C Mounted on ceramic board (250mm2× 0.
8mm)
Parameter
Drain-to-Source Breakd...