DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2363/2SK2364
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2363/2SK2364 is N-Channel MOS Field Effect Transistor designed for high
voltage switching applications.
PACKAGE DIMENSIONS (in millimeter)
FEATURES
10.
0±0.
3
• Low On-Resistance
2SK2363: RDS (on) = 0.
5 Ω (VGS = 10 V, ID = 4.
0 A) 2SK2364: RDS (on) = 0.
6 Ω (VGS = 10 V, ID = 4.
0 A)
3.
2±0.
2
4.
5±0.
2 2.
7±0.
2
Drain to Source
Voltage (2SK2363/2SK2364) Gate to Source
Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche ...