DatasheetsPDF.com

K2368

Part Number	K2368
Manufacturer	NEC
Description	2SK2368
Published	Feb 7, 2014
Detailed Description	DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2367/2SK2368 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ...
Datasheet	K2368 PDF File

Overview

DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2367/2SK2368 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.
PACKAGE DIMENSIONS (in millimeter) 1.
0 15.
7 MAX.
4 3.
2±0.
2 4.
7 MAX.
1.
5 FEATURES 2SK2368: RDS (on) = 0.
6 Ω (VGS = 10 V, ID = 8.
0 A) ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage (2SK2367/2SK2368) Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cyc...

Similar Datasheet

K2312 2SK2312 - Toshiba Semiconductor
K2313 2SK2313 - Toshiba Semiconductor
K2313 2SK2313 - Toshiba Semiconductor
K2324 2SK2324 - Panasonic
K2325TJ600 Medium Voltage Thyristor - IXYS
K2325TJ650 Medium Voltage Thyristor - IXYS
K2333 Power MOSFET - Shindengen
K2334 Silicon N-Channel MOS FET - Hitachi
K2340 2SK2340 - Panasonic
K2341 2SK2341 - NEC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)