DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2365/2SK2366
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SK2365, 2SK2365-Z/2SK2366, 2SK2366-Z is N-Channel
MOS Field Effect Transistor designed for high
voltage switching applications.
FEATURES • Low On-Resistance
2SK2365: RDS(on) = 0.
5 Ω (VGS = 10 V, ID = 5.
0 A) 2SK2366: RDS(on) = 0.
6 Ω (VGS = 10 V, ID = 5.
0 A)
• Low Ciss Ciss = 1 600 pF TYP.
• High Avalanche Capability Ratings • Isolate TO-220 Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source
Voltage (2SK2365/2SK2366) VDSS 450/500 V
Gate to Source
Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±10
A
Drain Current (pulse)*
ID(pulse) ±40
A
Total Power ...