Ordering number:ENN6121
N-Channel Silicon
MOSFET
2SK2919
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· On-chip high-speed diode (trr=100ns).
Package Dimensions
unit:mm 2128
[2SK2919] 8.
2 7.
8 6.
2 3
0.
6
4.
2 0.
4 0.
2
1.
2 8.
4 10.
0
0.
7
12 1.
0 1.
0 2.
54 2.
54
5.
08
10.
0 6.
0
2.
5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD Tch
Tstg
Tc=25°C
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Drain-to-Source...