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K2915

Toshiba Semiconductor
Part Number K2915
Manufacturer Toshiba Semiconductor
Description 2SK2915
Published Jul 15, 2014
Detailed Description 2SK2915 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2915 Chopper Regula...
Datasheet PDF File K2915 PDF File

K2915
K2915

Overview
2SK2915 www.
DataSheet4U.
com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2915 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance : RDS (ON) = 0.
31 Ω (typ.
) : |Yfs| = 15 S (typ.
) Unit: mm z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 16 64 150 1026 16 15 150 −55~150 Unit V V V A W mJ A mJ °C °C 1.
GATE 2.
DRAIN (HEAT SINK) 3.
SOURCE Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-16C1B Weight: 4.
6 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 0.
833 50 Unit °C / W °C / W Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 7.
01 mH, RG = 25 Ω, IAR = 16 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This trans...


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