2SK2929
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-552C (Z) 4th.
Edition Jun 1998 Features
• Low on-resistance R DS =0.
026 Ω typ.
• High speed switching • 4V gate drive device can be driven from 5V source
Outline
TO–220AB
D
G
1 2 S 3
1.
Gate 2.
Drain(Flange 3.
Source
2SK2929
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings 60 ±20 25 100 25 20 34 50 150 –55 to +150
Unit V V A A A A mJ...