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K2925

Hitachi
Part Number K2925
Manufacturer Hitachi
Description Silicon N-Channel MOSFET
Published Nov 30, 2018
Detailed Description 2SK2925(L),2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.060 Ω ty...
Datasheet PDF File K2925 PDF File

K2925
K2925

Overview
2SK2925(L),2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.
060 Ω typ.
• High speed switching • 4V gate drive device can be driven from 5V source Outline ADE-208-549C (Z) 4th.
Edition Jun 1998 DPAK–2 44 D G S 12 3 12 3 1.
Gate 2.
Drain 3.
Source 4.
Drain 2SK2925(L),2SK2925(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS ID I Note1 D(pulse) I DR I Note3 AP E Note3 AR Pch Note2 Channel temperature Tch Storage temperature Tstg Note: 1.
PW ≤ 10µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50Ω Ratings 60 ±20 10 40 10 10 8.
5 20 150 –55 to +150 Unit V V A A A A mJ W °C °C 2 2SK2925(L),2SK2925(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown vol...


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