SEMICONDUCTOR
TECHNICAL DATA
KF3N50DZ/DS
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
This planar stripe
MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES
VDSS= 500V, ID= 2.
5A Drain-Source ON Resistance : RDS(ON)=2.
5 Qg(typ) = 7.
50nC
(Max) @VGS = 10V
trr(typ) = 120ns (KF3N50DS) trr(typ) = 300ns (KF3N50DZ)
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source
Voltage
VDSS
Gate-Source
Voltage
VGSS
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Ava...