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KF3N50DZ

KEC
Part Number KF3N50DZ
Manufacturer KEC
Description N-Channel MOSFET
Published Jun 21, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA KF3N50DZ/DS N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe...
Datasheet PDF File KF3N50DZ PDF File

KF3N50DZ
KF3N50DZ

Overview
SEMICONDUCTOR TECHNICAL DATA KF3N50DZ/DS N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES VDSS= 500V, ID= 2.
5A Drain-Source ON Resistance : RDS(ON)=2.
5 Qg(typ) = 7.
50nC (Max) @VGS = 10V trr(typ) = 120ns (KF3N50DS) trr(typ) = 300ns (KF3N50DZ) MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt Drain Power Dissipation Tc=25 Derate above 25 PD Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA RATING 500 30 2.
5 1.
5 7 110 4 10 40 0.
32 150 -55 150 3.
1 110 UNIT V V A mJ mJ V/ns W W/ /W /W A CD B H G FF J E K L N M DIM MILLIMETERS A 6.
60 +_ 0.
20 B 6.
10 +_0.
20 C 5.
34 +_ 0.
30 D 0.
70 +_0.
20 E 2.
70 +_ 0.
15 F 2.
30 +_0.
10 G 0.
96 MAX H 0.
90 MAX J 1.
80 +_0.
20 K 2.
30 +_0.
10 L 0.
50 +_ 0.
10 M 0.
50 +_0.
10 N 0.
70 MIN O 0.
1 MAX 123 O 1.
GATE 2.
DRAIN 3.
SOURCE DPAK (1) PIN CONNECTION (KF3N50DZ/DS) D G S 2010.
11.
29 Revision No : 0 1/6 KF3N50DZ/DS ELECTRICAL CHARACTERISTICS (Tc=25 ) CHARACTERISTIC Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings SYMBOL TEST CONDITION BVDSS ...


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