SEMICONDUCTOR
TECHNICAL DATA
KF4N65P/F
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
This planar stripe
MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for active power factor correction and switching mode power supplies.
FEATURES VDSS=650V, ID=3.
6A Drain-Source ON Resistance : RDS(ON)(Max)=2.
5 @VGS=10V Qg(typ.
)= 12nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING SYMBOL
KF4N65P KF4N65F
Drain-Source
Voltage
VDSS
650
Gate-Source
Voltage
VGSS
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (...