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KF4N65FM

KEC
Part Number KF4N65FM
Manufacturer KEC
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Published Mar 23, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA KF4N65FM N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MO...
Datasheet PDF File KF4N65FM PDF File

KF4N65FM
KF4N65FM

Overview
SEMICONDUCTOR TECHNICAL DATA KF4N65FM N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for active power factor correction and switching mode power supplies.
FEATURES VDSS=650V, ID=3.
6A Drain-Source ON Resistance : RDS(ON)(Max)=2.
5 @VGS=10V Qg(typ.
)= 15nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Voltage VDSS VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt Drain Power Dissipation Tc=25 Derate above 25 PD Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RthJC RthJA RATING 650 30 3.
6* 2.
3* 8.
4* 103 3.
1 4.
5 37.
9 0.
30 150 -55 150 3.
3 62.
5 * : Drain current limited by maximum junction temperature.
UNIT V V A mJ mJ V/ns W W/ /W /W Q AC F O K E LM D NN 123 G B J R H 1.
GATE 2.
DRAIN 3.
SOURCE DIM MILLIMETERS A 10.
16 +_ 0.
2 B 15.
87 +_ 0.
2 C 2.
54 +_ 0.
2 D 0.
8 +_ 0.
1 E 3.
18 +_ 0.
1 F 3.
3 +_ 0.
1 G 12.
57 +_ 0.
2 H 0.
5 +_ 0.
1 J 13.
0 +_ 0.
5 K 3.
23 +_ 0.
1 L 1.
47 MAX M 1.
47 MAX N 2.
54 +_ 0.
2 O 6.
68 +_ 0.
2 Q 4.
7 +_ 0.
2 R 2.
76 +_ 0.
2 * Single Gauge Lead Frame TO-220IS (1) PIN CONNECTION D G S 2013.
5.
02 Revision No : 0 1/6 KF4N65FM ELECTRICAL CHARACTERISTICS (Tc=25 ) Static CHARACTERISTIC SYMBOL TEST CONDITION Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance Dynamic BVDSS ID=250 A, VGS=0V BVDSS/ Tj ID=250 A, Referenced to 25 IDSS VDS=650V, VGS=0V, Vth VDS=VGS, ID=250 A IGSS VGS= 30V, VDS=0V RDS(ON) VGS=10V, ID=1.
8A Total Gate Charge Gate-Source Charge G...


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