SEMICONDUCTOR
TECHNICAL DATA
LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS
FEATURES High breakdown
voltage VCEO 120V, high current 1A.
Low saturation
voltage and good linearity of hFE.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage
Collector Current
VCBO VCEO VEBO
IC ICP
Collector Power Dissipation
Ta=25 Tc=25
PC
Junction Temperature Storage Temperature Range
Tj Tstg
RATING -120 -120 -5 -1 -2 1.
5 8 150
-55 150
UNIT V V V
A
W
KTB631K
EPITAXIAL PLANAR PNP TRANSISTOR
A B C
H J K
D E
F G
L
M
N
O P
12 3
1.
EMITTER 2.
COLLECTOR 3.
BASE
DIM A B C
D E F G H J K L M N O P
MILLIMETERS 8.
3 MAX
5.
8 ...