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KTB631K

INCHANGE
Part Number KTB631K
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 9, 2020
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current-IC=-1.0A ·High Collector-Emitter Breakdown Voltage...
Datasheet PDF File KTB631K PDF File

KTB631K
KTB631K

Overview
isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current-IC=-1.
0A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type KTD600K ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -120 V -5 V IC Collector Current-Continuous -1 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -2 A 8 W 1.
5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ INCHANGE Semiconductor KTB631K isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor KTB631K ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -10μA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= -10μA ; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(sat) Base-Emitter Saturation Voltage IC= -500mA; IB= -50mA ICBO Collector Cutoff Current VCB= -50V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 DC Current Gain IC= -50mA ; VCE= -5V hFE-2 DC Current Gain IC=-500mA ; VCE= -5V fT Current-Gain—Bandwidth Product IC= -50mA ; VCE= -10V COB Output Capacitance IE=0 ; VCB= -10V,ftest= 1MHz Switching times tf Fall Time toff Turn-Off Time tstg Storage Time IC= -500mA ,RL= 24Ω, IB1= -IB2= -50m A,VCE= -12V MIN TYP.
MAX UNIT -120 V -120 V -5 V -0.
4 V -1.
2 V -1 μA -1 μA 100 320 20 110 MHz 30 pF 0.
08 μs 0.
1 μs 0.
6 μs  hFE-1 Classifications Y GR 100-200 160-320 isc website：www...


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