Part Number
|
LMBT3946DW1T1G |
Manufacturer
|
Leshan Radio Company |
Description
|
Dual Transistor |
Published
|
Oct 12, 2015 |
Detailed Description
|
LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
NPN/PNP Silicon
The LMBT3946DW1T1G device is a spin–off of ...
|
Datasheet
|
LMBT3946DW1T1G
|
Overview
LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
NPN/PNP Silicon
The LMBT3946DW1T1G device is a spin–off of our popular SOT–23/SOT–323 three–leaded device.
It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package.
By putting two discrete devices in one package , this device is ideal for low–power surface mount applications where board space is at a premium.
LMBT3946DW1T1G S-LMBT3946DW1T1G
●FEATURES 1)Low VCE(sat), ≤ 0.
4 V 2)Simplifies Circuit Design
3)Reduces Board Space 4)Reduces Component Count 5)Available in 8 mm, 7–inch/3,000 Unit Tape and Reel 6)hFE, 100–300 7)We declare that the material of product compliant w...
Similar Datasheet