DatasheetsPDF.com

LMBT3946DW1T1

Leshan Radio Company
Part Number LMBT3946DW1T1
Manufacturer Leshan Radio Company
Description Transistors
Published Jul 7, 2008
Detailed Description LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3946DW1T1 device is a spin–off of our popular SOT–2...
Datasheet PDF File LMBT3946DW1T1 PDF File

LMBT3946DW1T1
LMBT3946DW1T1

Overview
LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors The LMBT3946DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device.
It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package.
By putting two discrete devices in one package, this device is ideal for low–power surface mount applications where board space is at a premium.
• hFE, 100–300 • Low VCE(sat), < 0.
4 V • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7–inch/3,000 Unit Tape and Reel • Device Marking: LMBT3946DW1T1 = 46 Symbol V CEO Value 40 -40 V CBO LMBT3946DW1T1 6 5 4 www.
DataSheet4U.
com 1 2 3 SOT-363/SC-88 3 2 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage (NPN) (PNP) Collector-Base Voltage (NPN) (PNP) Emitter-Base Voltage (NPN) (PNP) Collector Current-Continuous (NPN) (PNP) Electrostatic Discharge Unit Vdc Q1 Q2 4 5 6 Vdc 60 -40 LMBT3946DW1T1* *Q1 PNP Q2 NPN V EBO 6.
0 -5.
0 IC 200 -200 HBM>16000, MM>2000 Max 150 833 –55 to +150 Vdc ORDERING INFORMATION Device Package Shipping mAdc LMBT3946DW1T1 SOT-363 3000Units/Reel ESD V THERMAL CHARACTERISTICS Characteristic Symbol (1) Total Package Dissipation PD T A = 25°C Thermal Resistance Junction Rθ JA to Ambient Junction and Storage Temperature Range TJ,Ts t g Unit mW °C/W °C 1.
Device mounted on FR4 glass epoxy printed circuit board using the minimum 1.
recommended footprint.
LMBT3946DW1T1 1/11 LESHAN RADIO COMPANY, LTD.
LMBT3946DW1T1 ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(2) (IC = 1.
0 mAdc, IB = 0) (IC = –1.
0 mAdc, IB = 0) Collector–Base Breakdown Voltage www.
DataSheet4U.
com (IC = 10 µAdc, IE = 0) (IC = –10 µAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) (IE = –10 µAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.
0 Vdc) (VCE = –30 Vdc, VEB = –3.
0 Vdc) Collector Cutoff C...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)