Infrared Light Emitting Diodes
LN66F
GaAs Infrared Light Emitting Diode
Unit : mm
For light source of remote control systems Features
High-power output, high-efficiency : Ie = 13.
0 mW/sr (min.
) Emitted light spectrum suited for silicon photodetectors Narrow directivity : θ = 15 deg.
(typ.
) Transparent epoxy resin package
13.
5±1.
0 11.
5±1.
0 3.
6±0.
3 1.
0 7.
65±0.
2
ø5.
0±0.
2 Not soldered 2-1.
0±0.
15 2-0.
6±0.
15 2.
54 0.
6±0.
15 2 1 1: Cathode 2: Anode ø6.
0±0.
2
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse
voltage (DC) Operating ambient temperature Storage temperature
*
Symbol PD IF IFP* VR Topr Tstg
Ratings 75 50 1.
5 3 –25 to +8...