Part Number
|
MAGX-000035-010000 |
Manufacturer
|
MA-COM |
Description
|
Power Transistor |
Published
|
May 26, 2016 |
Detailed Description
|
MAGX-000035-010000 MAGX-000035-01000S
GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz
Features
GaN Depletio...
|
Datasheet
|
MAGX-000035-010000
|
Overview
MAGX-000035-010000 MAGX-000035-01000S
GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.
5 GHz
Features
GaN Depletion-Mode HEMT Microwave Transistor
Common-Source configuration No internal matching Broadband Class AB operation RoHS* Compliant +50 V Typical Operation MTTF = 600 years
Description
The MAGX-000035-01000X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications.
Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application...
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