Ordering number : ENN8194
MCH5810
com
MCH5810
Features
• •
MOSFET : P-Channel Silicon
MOSFET SBD : Schottky Barrier Diode
DC / DC Converter Applications
•
Composite type with a P-Channel Sillicon
MOSFET (MCH3335) and a Schottky Barrier Diode (SBS011) contained in one package facilitating high-density mounting.
[
MOSFET] • Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
[SBD] • Short reverse recovery time.
• Low forward
voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter [
MOSFET] Drain-to-Source
Voltage Gate-to-Source
Voltage(*1) Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD...