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MCH5812

Sanyo Semicon Device
Part Number MCH5812
Manufacturer Sanyo Semicon Device
Description General-Purpose Switching Device Applications
Published Mar 20, 2010
Detailed Description Ordering number : ENN7998 MCH5812 www.DataSheet4U.com MCH5812 Features • MOSFET : N-Channel Silicon MOSFET SBD : Scho...
Datasheet PDF File MCH5812 PDF File

MCH5812
MCH5812

Overview
Ordering number : ENN7998 MCH5812 www.
DataSheet4U.
com MCH5812 Features • MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications • • Composite type with a N-channel sillicon MOSFET (MCH3445) and a schottky barrier diode (SS10015M) contained in one package facilitating high-density mounting.
[MOSFET] • Low ON-resistance.
• Ultrahigh-speed switching.
• 1.
8V drive.
[SBD] • Short reverse recovery time.
• Low forward voltage.
Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 1 3 --55 to +125 --55 to +125 V V A A °C °C VDSS VGSS ID IDP PD Tch...


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